A double data rate toggle mode NAND flash memory solution from Toshiba offers an interface rated at 133 megatransfers/second.
Storage solutions specialist Toshiba announced 32nm double data rate
Toggle Mode NAND flash memory for use in solid state drives, in
multilevel cell versions with densities of 64GB,
128GB and 256GB and single-level cell versions with densities of
32GB, 64GB and 128GB. The company said Toggle Mode NAND features a
faster interface than conventional or "legacy" asynchronous NAND memory
and boasts lower power consumption than other synchronous DDR NAND
Toshiba said DDR Toggle Mode 1.0 NAND has an interface rated at 133
megatransfers/second (MT/s), compared to 40MT/s for legacy SLC single
data rate NAND, more than three times the current generation SLC chips.
The company said this speed makes it suitable for high performance
solid state storage applications including enterprise storage. Toggle
Mode NAND supports common legacy NAND commands including basic,
multiplane and cache operations.
Megatransfers per second refer to the number of data transfers (or
data samples) captured per second, with each sample occurring at the
clock edge. In a double data rate system, the data is transferred on
both the rising and falling edge of the clock signal. For purposes of
measuring data transfers in this context, one Megatransfer equals
1 million transfers per second. Toshiba noted actual data transfer
speed may vary depending on the device, read and write conditions, and
Since it uses an asynchronous interface similar to that used in
conventional NAND, the Toshiba DDR Toggle Mode NAND requires no clock
signal, which means that it uses less power and has a simpler system
design compared to synchronous NAND alternatives, the company said. In
addition, the DDR interface in Toggle Mode NAND uses a Bidirectional
DQS to generate input/output signals (I/Os) using the rising and
falling edge of the write-erase signal. Toggle Mode NAND also has
on-die termination to help achieve less crosstalk. "Scalability to
future high-frequency operation is enabled as a result of the
bi-directional data signal," a company release noted.
Toshiba recently announced a commitment to a new standard for advanced
high-performance NAND flash memory, a DDR NAND flash with a 400Mbps
interface. "This next generation Toggle Mode DDR NAND 2.0 is targeted
to provide a three-fold increase in interface speed over Toggle DDR 1.0
and a 10-fold increase over the 40Mbps single data rate NAND in
widespread use today," the release stated.
Nathan Eddy is Associate Editor, Midmarket, at eWEEK.com. Before joining eWEEK.com, Nate was a writer with ChannelWeb and he served as an editor at FierceMarkets. He is a graduate of the Medill School of Journalism at Northwestern University.