Samsung, SAP Open Research Center for Next-Gen DRAM
The jointly run Korean research center will focus on next-generation DRAM running SAP HANA databases for faster data processing and better analysis of data.
In-memory databases, an expensive enterprise tool that many industry people believe will become cheaper and more commonly utilized during the next several years, soon will be getting a new development center.
Solid-state dynamic memory maker Samsung and HANA database developer SAP opened a joint research center Sept. 29 where engineers will explore and test new technology ideas to be used in next-generation in-memory computing.
The ceremony was held at Samsung Electronics' Hwaseong campus in South Korea, with Dr. Young-Hyun Jun, president of Samsung Electronics' Memory Business, and Adaire Fox-Martin, president of SAP Asia Pacific Japan, participating.
The establishment of the research center is part of an extended partnership between the two international corporations, under which they will focus on next-generation DRAM (dynamic random-access memory) technology development that enables faster data processing and more insightful analyses of rapidly increasing amounts of data.
Germany-based SAP and Samsung also said they will work together globally on the commercialization of the resulting advanced in-memory market products.
At the research center, Samsung and SAP said they will provide global customers with optimized in-memory solutions through the provisioning of extensive technical support that will include test runs of the HANA database and evaluation of Samsung's latest high-performance, high-density memory solutions.
The server system at the South Korea center uses a 24TB in-memory platform, which is based on Samsung's 128GB DDR4 3DS (three-dimensional stacked) DRAM modules fabricated on the 20nm process node.
The companies plan to apply 10nm-class 256GB 3DS DRAM modules next year into the HANA platform to improve overall system performance and power efficiency.