Intel, Micron NAND Flash Memory Offers Compact Form, High Capacity

Chip maker Intel and semiconductor solutions specialist Micron Technology announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer process technology, offering a high-capacity, compact NAND flash memory.

The companies have sent initial product samples to select customers and expect the product to be in full production by the end of the year.

Designed by IM Flash Technologies, a joint venture of the two companies, the 64G-bit, or 8GB, 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multilevel cell). The industry also refers to 3bpc as triple-level cell (TLC.) An Intel release claimed the device is more than 20 percent smaller than the same capacity of Intel and Micron's 25nm MLC, currently the smallest single 8GB device in production. The die measures 131mm2 and comes in an industry-standard thin small outline package (TSOP) package.

"With January's introduction of the industry's smallest die size at 25nm, quickly followed by the move to 3-bit-per-cell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products," said Tom Rampone, Intel vice president and general manager of Intel NAND Solutions Group. "Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB TLC 25nm NAND device."

The new 64G-bit 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers.

"As the role of NAND memory continues to escalate in consumer electronics products, we see the early transition to TLC on 25nm as a competitive edge in our growing portfolio of NAND memory products," said Brian Shirley, vice president of Micron's NAND Solutions Group. "We are already working to qualify the 8GB TLC NAND flash device within end-product designs, including higher-capacity products from Lexar Media and Micron."