Samsung Begins Mass Producing World's Fastest DRAM
The new memory processor is based on the second-generation High Bandwidth Memory (HBM2) interface, designed for use in high-performance computing.Samsung said Jan. 19 that it has opened the throttle on mass producing the data storage industry's first 4-gigabyte DRAM (dynamic random access memory) package. The memory processor is based on the second-generation High Bandwidth Memory (HBM2) interface, designed for use in high-performance computing, advanced graphics and network systems, as well as enterprise servers. Seoul-based Samsung says its new HBM solution will bring more than seven times' faster performance than current DRAM, allowing faster responsiveness for high-end computing tasks that include parallel computing, graphics rendering and machine learning. The newly introduced 4GB HBM2 DRAM uses Samsung's 20-nanometer process technology and advanced HBM chip design.
The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8-gigabit (Gb) core dies on top. These are then vertically interconnected by laser-drilled-through-silicon-vias (TSV) holes and microbumps.