Samsung V-NAND SSD Aims for Enterprise, Data Centers
Samsung's V-NAND SSD comes in 960GB and 480GB versions and employs cylinder-shaped 3D Charge Trap Flash (CTF) cell structures.Consumer electronics giant Samsung announced its first solid state drive (SSD) based on the company’s 3D V-NAND technology and designed for use in enterprise servers and data centers, during a keynote speech at the Flash Memory Summit 2013. Samsung said it began producing its new V-NAND SSDs earlier this month. The company’s proprietary 3D V-NAND technology provides manufacturing productivity improvements over twice that of 20nm-class planar NAND flash, by employing cylinder-shaped 3D Charge Trap Flash (CTF) cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array. During his keynote remarks, executive vice president of Samsung’s semiconductor research and development division E.S. Jung claimed that the 3D V-NAND would drive disruptive innovation that can be compared to a "digital big bang" in the global IT industry, and contribute to much more significant growth in the memory market. Samsung's V-NAND SSD comes in 960GB and 480GB versions. The 960GB version offering more than 20 percent increase in sequential and random write speeds by utilizing 64 dies of MLC 3D V-NAND flash, each offering 128GB of storage, with a six-gigabit-per-second serial advance technology attachment (SATA) interface controller.
"By applying our 3D V-NAND–which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption," Jung said in his keynote speech.